1990
E.O. Einset, D.I. Fotiadis, K.F. Jensen, and T.F. Kuech, “Models of 3D flows and deposition chemistry in horizontal CVD reactors,” Proc. Eleventh Int. Conf. CVD, (K.E. Spear and G.W. Cullen, Eds), Electrochem. Soc., Pennington, NJ, pp, 38-48 (1990).
K.-L. Ho, A.V. Annapragada, K.F. Jensen, S.A. Hanson, W.L. Gladfelter, and J.F. Evans, “MOCVD of AlN by using novel precursors,” Proc. Eleventh Int. Conf. CVD, (K.E. Spear and G.W. Cullen, Eds), Electrochem. Soc., Pennington, NJ, pp. 388-394 (1990).
R.R. Melkote and K.F. Jensen, “Models for chemical vapor infiltration of fibrous substrates,” Proc. Eleventh Int. Conf. CVD, (K.E. Spear and G.W. Cullen, Eds) Electrochem. Soc., Pennington, NJ, pp. 506-512 (1990).
M.C. Flemings, K.F. Jensen, and A. Mortensen, “A proposal for a generic materials processing course,” Bulletin of the Materials Research Society 15 (8) 35-36 (1990).
W.L. Gladfelter, J.-W. Hwang, J.F. Evans, S.A. Hanson, K.F. Jensen, and K.-L. Ho, “New chemical routes to metal nitrides,,” in Better Ceramics Through Chemistry IV, C.J. Brinker, D.E. Clark, D.R. Ulrich, and B.J.J. Zelinsky (Eds.), Mater. Res. Soc. Symp. 180, 1017-1027 (1990).
D.I. Fotiadis and K.F. Jensen, “Symmetry breaking phenomena in vertical and horizontal CVD reactors,” Proc. Eleventh Int. Conf. CVD, (K.E. Spear and G.W. Cullen, Eds.) Electrochem. Soc., Pennington, NJ, pp. 92-99 (1990).
T.R. Omstead, A.V. Annapragada, and K.F. Jensen, “ In situ microwave generation of arsine from solid arsenic,” Appl. Phys. Lett., 57(24), 2543-2545 (1990).
P.E. Price, Jr. and K.F. Jensen, “Optically induced bifurcations in laser direct-write metallization,” Chem. Eng. Sci. 45(8), 2511-2518 (1990).
J.-W. Hwang, S.A. Hanson, D.B. Britton, J.F. Evans, K.F. Jensen and W.L. Gladfelter, “Cyclo-trigallazane, [H2GaNH2]3. Its preparation, structure and autocatalytic conversion to cubic gallium nitride at 150oC,” Chemistry of Materials, 2(4), 342-343 (1990).
K.-L Ho, K.J. Jensen, S.A. Hanson, J.F. Evans, D.C. Boyd and W.L. Gladfelter, “MOCVD of wide bandgap iii-v semiconductors by using novel precursors,” in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, J.T. Glass, R. Messier and N. Fujimoni (Eds.), Proc. Mat. Res. Soc., 162, 605-110 (1990)
W.L. Gladfelter, D.C. Boyd, J.-W. Hwang, R.T. Haasch, R.K. Schulze, J.F. Evans, K.-L. Ho and K.F. Jensen, “Organometallic chemical vapor deposition of aluminum nitride and aluminum metal,” in Metal-Metal Bonds and Clusters in Chemistry and Catalysis, J.P. Fackler, Ed., Plenum (1990), pp. 215-230.
J. Leu, M. Dalvie, and K.F. Jensen, “ FTIR investigations of plasma modified polymer surfaces and their interfaces with plasma deposited tungsten,” in Characterization of plasma-enhanced CVD processes, G. Lucovsky, D.E. Ibbotson, and D.W. Hess (Eds) Proc. Mater. Res. Soc., 165, 239-145 (1990).
R. R. Melkote and K.F. Jensen, “Chemical vapor infiltration of fibrous preforms under isothermal and thermal-gradient conditions,” in Chemical Vapor Deposition of Refractory Metals and Ceramics, T.M. Besman and B.M. Ballois (Eds.) Proc. Mat. Res. Soc.,168, (1990).
K.P. Giapis, D.C. Lu, D.I. Fotiadis and K.F. Jensen, “A new MOCVD reactor system for the epitaxial growth of ZnSe modeling and experimental results for growth from dimethylzinc and diethylselenide,” J. Crystal Growth 104(3), 629-640 (1990).
K.P. Giapis, D.C. Lu, K.F. Jensen, and J.E. Potts, “Temperature variations in the electrical and photoluminescence properties of ZnSe grown by MOCVD,” J. Crystal Growth 104(2), 291-296 (1990).
R.H. Marking, W.L. Gladfelter and K.F. Jensen, “Application of specific deuterium labeling and nuclear magnetic resonance spectroscopy to the study of the mechanism of pyrolysis of tertiarybutylarsine and tertiarybutylarsine-d2,” Chemistry of Materials 2(5), 499-506 (1990).
K.P. Giapis, K.F. Jensen, J.E. Potts and S.J. Pachuta, “Investigation of carbon incorporation in ZnSe: effects on morphology, electrical, and photoluminescence properties,” J. Electron. Mat. 19(5), 453-462 (1990).
M. Dalvie and K.F. Jensen, “The importance of free radical recombination reactions in CF4/O2 plasma etching of silicon,” J. Vac. Sci. Technol. B 3, 1648-1653 (1990).
K.P. Giapis and K.F. Jensen, “Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSe,” J. Crystal Growth 101(1-4), 111-117 (1990).
T.R. Omstead and K.F. Jensen, “Kinetic model for MOCVD of GaAs with organometallic-arsenic precursors,” J. Chem. of Materials. 2(1), 39-49 (1990).
D.I. Fotiadis, S. Kieda and K.F. Jensen, “Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy: I. Effects of heat transfer characteristics, reactor geometry, and operating conditions,” J. Crystal Growth 102(3), 441-470 (1990).
D.I. Fotiadis and K.F. Jensen, “Thermophoresis of solid particles in horizontal chemical vapor deposition reactors,” J. Crystal Growth 102(4), 743-761 (1990).
M. Dalvie and K.F. Jensen, “Combined experimental and modeling study of spatial effects in plasma etching,” J. Electrochem. Soc. 137(4), 1062-1078 (1990).
M.D. Foster and K.F. Jensen, “Interpreting scattering from random porous solids: A model of fully penetrable spherical voids,” J. Int. Coll. Sci. 135(1), 132-146 (1990).
D.I. Fotiadis, M. Boekholt, K.F. Jensen and W. Richter, “Flow and heat transfer in CVD reactors under a variety of operating conditions: Comparison of Raman temperature measurements and finite element predictions,” J. Crystal Growth 100(3), 577-599 (1990).
M.D. Foster and K.F. Jensen, “Small angle X-ray scattering investigations of pore structure changes during coal gasification,” Fuel 69(1), 88-96 (1990).
1989
S. Reyes, E. Iglesia and K.F. Jensen, “Application of percolation theory concepts to the analysis of gas-solid reactions,” Solid State Ionics 32-33, 833-842 (1989).
R. R. Melkote and K.F. Jensen, Gas diffusion in random-fiber substrates,” AIChE J. 35(12), 1942-1952 (1989).
W.P. Stewart, J. Leu and K.F. Jensen, “XPS and FTIR studies of polyimide metal interface formation,” in Interfaces between Polymers, Metals and ceramics, B.M. DeKoren, A.J. Gellman and R. Rosenberg (Eds.) Proc. Mat. Res. Soc. 153, 285-290 (1989).
J. Leu and K.F. Jensen, “In situ FTIR investigations of polymer surface modifications in downstream microwave plasma etching,” in Interfaces between Polymers, Metals and ceramics, B.M. DeKoren, A.J. Gellman and R. Rosenberg (Eds.) Proc. Mat. Res. Soc. 153, 181-186 (1989).
K.F. Jensen, “Transport phenomena and chemical reaction issues in OMVPE of compound semiconductors,” J. Crystal Growth 98(1-2), 148-166 (1989).
T.R. Omstead, S. Brandon, M. Hoveland, K.F. Jensen, G.T. Muir and D.A. Bohling, “Gas phase and surface reactions of organometallic As sources,” in III-V Heterostructures for Electronic/Photonic Devices, C.W. Tu, V.D. Mattera and A.C. Gossard (Eds.) Proc. Mat. Res. Soc. 145, 181-185 (1989).
P.E. Price, Jr. and K.F. Jensen, “Multiplicities and periodic behavior in laser direct-write metallization,” Chem. Eng. Sci. 44(9),1879-1891 (1989).
T.J. Mountziaris, D.I. Fotiadis and K.F. Jensen, “Models and mechanisms of III-V heterostructure growth by MOVPE” in III-V Heterostructures for Electronic/Photonic Devices, C.W. Tu, V.D. Mattera and A.C. Gossard (Eds.), Proc. Mat. Res. Soc. 145, 107- 118 (1989).
K.P. Giapis, K.F. Jensen, J.E. Potts and S.J. Pachuta, “Carbon incorporation in ZnSe grown by MOCVD,” Appl. Phys. Lett. 55(5), 463-465 (1989).
W.L. Gladfelter, D.C. Boyd and K.F. Jensen, “Trimethylamine complexes of alane as precursors for the low pressure chemical vapor deposition (LPCVD) of aluminum,” Chemistry of Materials 1(3), 339-343 (1989).
D.A. Bohling, G.T. Muhr, K.F. Jensen, T.R. Omstead and S. Brandon, “Recent advances in arsine substitutes,” Chemtronics 4, 26-30 (1989).
K.F. Jensen, “Chemical vapor deposition,” in Microelectronics Processing: Chemical Engineering Aspects, D.W. Hess and K.F. Jensen (Eds.), Advances in Chemistry Series 221, 199-264 (1989).
D.W. Hess and K.F. Jensen, “Microelectronics processing,” in Microelectronics Processing: Chemical Engineering Aspects, D.W. Hess and K.F. Jensen (Eds.), Advances in Chemistry Series 221, 1-33 (1989).
M.F. Ellis and K.F. Jensen, “Computer aided system identification,” in On-Line Applications in the Undergraduate Chemical Engineering Laboratory: A CACHE Anthology, D. Mellichamp and A. Cinar (Eds.), CACHE Corporation, Austin, Texas, 253-263 (1988).
T.F. Mountziaris and K.F. Jensen, “A kinetic model for metalorganic chemical vapor deposition of GaAs from trimethylgallium and arsine,” in Chemical Perspectives of Microelectronic Materials, M.E. Gross, J. Jasinski and J.T. Yates (Eds.), Proc. Mat. Res. Soc. 131,117-122 (1989).
T.R. Omstead, P. Van Sickle and K.F. Jensen, “Gas phase and surface reactions in MOCVD of GaAs from triethylgallium, trimethylgallium, and organometallic arsenic precursors,” in Chemical Perspectives of Microelectronic Materials, M.E. Gross, J. Jasinski and J.T. Yates (Eds.), Proc. Mat. Res. Soc. 131,103-108 (1989).
W.L. Gladfelter, D.C. Boyd, J.-W. Hwang, R.T. Haasch, J.F. Evans, K.-L. Ho and K.F. Jensen, “New precursors for the organometallic chemical vapor deposition of aluminum nitride,” in Chemical Perspectives of Microelectronic Materials, M.E. Gross, J. Jasinski and J.T. Yates (Eds.), Proc. Mat. Res. Soc. 131,447-452 (1989).
K.P. Giapis, Lu Da-Cheng and K.F. Jensen, “Effects of the selenium precursor on the growth of ZnSe by metalorganic chemical vapor deposition,” in Chemical Perspectives of Microelectronic Materials, M.E. Gross, J. Jasinski and J.T. Yates (Eds.), Proc. Mat. Res. Soc. 131,63-68 (1989).
D.I. Fotiadis, E.O. Einset, H.K. Moffat and K.F. Jensen, “Finite element analysis of chemical vapor deposition reactor flows,” Proceedings Seventh Int. Conf. Finite Element Methods in Flow Problems, T.J. Chung and G.R. Karr (Eds.), Univ. Alabama-Huntsville Press, 428-433 (1989).
P.E. Price, Jr. and K.F. Jensen, “Modelling of pyrolytic laserdirect-writing from thin metalorganic films,” in Laser and Particle-Beam Chemical Processes on Surfaces, A.W. Johnson, G.L. Loper and T.W. Sizmon (Eds.), Proc. Mat. Res. Soc. 129, 107-119 (1989).
R. Lückerath, W. Richter and K.F. Jensen, “Gas-phase and surface effects in the thermal decomposition of AsH3 and PH3 studied by CARS,” NATO Adv. Study Inst. (D. Cole-Hamilton and J.O. Williams, Eds). Series B: Physics 198 157-167 (1989).
K.P. Giapis, D.C. Lu and K.F. Jensen, “High-quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics,” Appl. Phys. Lett. 54(4), 353-355 (1989).
1988
M.F. Ellis, T.W. Taylor and K.F. Jensen, “Online estimation of conversion and the molecular weight distribution in batch methyl methacrylate solution polymerization,” Proc. Am. Control Conf., Atlanta, Georgia, 684-688 (June 1988).
M.F. Ellis, T.W. Taylor and K.F. Jensen, “Online measurements and predictions in the methylmethacrylate polymerization system,” ACS Polymer Preprints 29(1), 573-574 (1988).
J. Almlöff, D.G. Truhlar, H.T. Davis, K.F. Jensen, M. Tirrell and T. Lybrand, “Supercomputer chemistry at the University of Minnesota,” Int. J. Supercomp. Applic. 2(2), 5-15 (1988).
K.F. Jensen, “Elements of teaching chemical reaction engineering,” in Chemical Engineering Education. Curricula for the Future, Proc. of the Indo-U.S. Seminar, Indian Institute of Science, D. Ramkrishna, P.B. Deshpande, R. Kumar and M.M. Sharma (Eds.), Bangalore, India, 106-112 (January 1-4, 1988).
P.W. Lee, T.R. Omstead, D.R. McKenna and K.F. Jensen, “In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3,” J. Crystal Growth 93(1-4), 134-142 (1988).
T.R. Omstead, P.M. Van Sickle, P.W. Lee and K.F. Jensen, “Gas phase and surface reactions in MOCVD of GaAs from triethylgallium, trimethylgallium and tertiarybutylarsine,” J. Crystal Growth 93(1-4), 20-28 (1988).
H.K. Moffat, T.F. Kuech, K.F. Jensen and P.J. Wang, “Gas phase and surface reactions in silicon doping of GaAs by silanes,” J. Crystal Growth 93(1-4), 594-601 (1988).
R. Lückerath, P. Tommack, A. Hertling, H.J. Koss, P. Balk, K.F. Jensen and W. Richter, “Coherent anti-Stokes Raman Scattering in situ diagnostics in MOVPE. The thermal decomposition of AsH3 and PH3,” J. Crystal Growth 93(1-4), 151-158 (1988).
R.R. Melkote and K.F. Jensen, “Models for catalytic pore plugging, application to hydrodemetallation,” Chem. Eng. Sci. 44(13), 649-663 (1989).
D.W. Kisker, D.R. McKenna and K.F. Jensen, “Limitations to the OMVPE growth of Hg compounds due to hydrodynamic effects,” Materials Lett. 6(4), 123-128 (1988).
M.F. Ellis, T.W. Taylor, K.F. Jensen and V. Gonzalez, “Estimation of the molecular weight distribution in batch polymerization,” AIChE J. 34(8), 1341-1353 (1988).
D.C. Skouby and K.F. Jensen, “Modelling of pyrolytic laser-assisted chemical vapor deposition: Effects of kinetics and choice of substrate,” Mat. Res. Soc. Symp. 101, 107-112 (1988).
H.K. Moffat and K.F. Jensen, “Three-dimensional flow effects in silicon CVD in horizontal reactors,” J. Electrochem. Soc. 135(2), 459-471 (1988).
K.F. Jensen, D.I. Fotiadis, H.K. Moffat, E.O. Einset, A.M. Kremer and D.R. McKenna, “Fluid mechanics of chemical vapor deposition,” in Interdisciplinary Issues in Materials Processing and Manufacturing, S.K. Samanta, K. Komanduri, R. McMeeking, M.M. Chen, A. Tseng (Eds.), Am. Soc. Mech. Eng., 565-586 (1987).
D.C. Skouby and K.F. Jensen, “Modeling of pyrolytic laser-assisted chemical vapor deposition: Mass transfer and kinetic effects influencing the shape of the deposit,” J. Appl. Phys. 63(1), 198-206 (1988).
1987
D.I. Fotiadis, A.M. Kremer, D.R. McKenna and K.F. Jensen, “Complex flow phenomena in vertical MOCVD reactors. Effects on deposition uniformity and interface abruptness,” J. Crystal Growth 85(1-2), 154-164 (1987).
P.W. Lee, T.R. Omstead, D.R. McKenna and K.F. Jensen, “In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactions,” J. Crystal Growth 85(1-2), 165-174 (1987).
M.F. Ellis, V. Gonzalez, T.W. Taylor and K.F. Jensen, “Estimation of molecular weight distributions in methyl methacrylate solution polymerization,” Proc. Am. Control Conf. Minneapolis, Minnesota, 1412-1418 (June 1987).
K.F. Jensen, D.I. Fotiadis, P.W. Lee, D.R. McKenna and H.K. Moffat, “Gas phase chemistry and transport phenomena in MOCVD reactors,” Symp. Growth of Compound Semiconductors, Soc. Photo-Optical Inst. Eng. 796, 178-190 (1987).
D.C. Skouby and K.F. Jensen, “Modeling of energy and mass transport in laser assisted CVD,” Symp. Advanced Processing of Semiconductor Devices, Soc. Photo-Optical Inst. Eng. Proc. 797, 40-47 (1987).
K.F. Roenigk, K.F. Jensen and R.W. Carr, “Rice-Ramsperger-Kassel-Marcus theoretical prediction of high-pressure Arrhenius parameters by nonlinear regression: Application to silane and disilane decomposition,” J. Phys. Chem. 91(22), 5732-5739 (1987).
K.F. Roenigk, K.F. Jensen and R.W. Carr, “Rice-Ramsperger-Kassel-Marcus theoretical prediction of high-pressure Arrhenius parameters by nonlinear regression, I,” J. Phys. Chem. 91(22), 5726-5732 (1987).
K.F. Roenigk and K.F. Jensen, “Low pressure CVD of silicon nitride,” J. Electrochem. Soc. 134(7), 1777-1785 (1987).
S. Reyes and K.F. Jensen, “Percolation concepts in modelling of gas-solid reactions III—-Application to sulfation of calcined limestone,” Chem. Eng. Sci. 42(3), 565-574 (1987).
K.F. Jensen, H.K. Moffat and K.F. Roenigk, “Chemical vapor deposition of silicon—Transport phenomena and growth models,” in Processing of Electronic Materials, C.G. Law and R. Pollard (Eds.), American Institute of Chemical Engineers, New York, 41-61 (1987).
K.F. Jensen, “Micro-reaction engineering: Applications of reaction engineering to processing of electronic and photonic materials,” Chem. Eng. Sci. 42(5), 923-958 (1987)
1986
T.W. Taylor, V. Gonzalez and K.F. Jensen, “Modelling and control of the molecular weight distribution in methyl methacrylate polymerization,” in Polymer Reaction Engineering, High Conversion Polymerization and Polycondensation, K.H. Reichert and W. Geisleler (Eds.), Huthig and Wepf, Verlag, New York, pp. 261-273 (1986).
V. Gonzalez, T.W. Taylor and K.F. Jensen, “On-line estimation of molecular weight distributions in methyl methacrylate polymerization,” Proc. Amer. Control Conference, Seattle, Washington, 1768-1773 (June 1986).
K.F. Jensen, “Control problems in processing of electronic materials,” Chemical Process Control III, Elsevier, New York, 623-640 (1986).
J.B. Planeaux, K.F. Jensen and W.W. Farr, “Dynamic behavior of continuous stirred-tank reactors with extraneous thermal capacitance,” Lect. Appl. Math. 24, 101-128 (1986).
P.W. Lee, D.R. McKenna, D. Kapur and K.F. Jensen, “MOCVD in inverted stagnation point flow: I. Deposition of GaAs from TMGa and TMAs,” J. Crystal Growth 77, 120-127 (1986).
H.K. Moffat and K.F. Jensen, “Complex flow phenomena in MOCVD reactors. I. Horizontal reactors,” J. Crystal Growth 77(1-3), 108-119 (1986).
D.B. Graves and K.F. Jensen, “Theoretical and computational problems in modelling glow discharges,” Mat. Res. Soc. Symp. Proc. 68, 219-230 (1986).
M. Dalvie, K.F. Jensen and D.B. Graves, “Modeling of reactors for plasma processing I. Silicon etching by CF4 in a radial flow reactor,” Chem. Eng. Sci. 41(4), 653-660 (1986).
C. Houtman, D.B. Graves and K.F. Jensen, “CVD in stagnation point flow—-An evaluation of the classical 1D treatment,” J. Electrochem. Soc. 133(5), 961-970 (1986).
J.B. Planeaux and K.F. Jensen, “Bifurcation phenomena in CSTR dynamics I. A system with extraneous thermal capacitance,” Chem. Eng. Sci. 41(6), 1497-1523 (1986).
D.B. Graves and K.F. Jensen, “A continuum model of DC and RF discharges,” IEEE Trans. Plasma Sci. 14(2), 78-91 (1986).
S. Reyes and K.F. Jensen, “Percolation concepts in modelling of gas-solid reactions. II. Application to char gasification in the diffusion regime,” Chem. Eng. Sci. 41(2), 345-354 (1986).
S. Reyes and K.F. Jensen, “Percolation concepts in modelling of gas-solid reactions. I. Application to char gasification in the kinetic regime,” Chem. Eng. Sci. 41(2), 333-343 (1986).